density of defects中文是什么意思

• 缺陷密度

• "density"中文翻译    n. 1.稠密；浓厚。 2.【物理学】浓度；密度；比重。 ...
• "defect"中文翻译    vi. 叛变；逃走。 He defected to th ...
• "defects" 中文翻译 :    布疵; 缺陷; 瑕疵
• "acrosomal defects" 中文翻译 :    顶体异常
• "allowable defects" 中文翻译 :    容许靠
• "annealing of defects" 中文翻译 :    缺陷退火
• "beauty defects" 中文翻译 :    外观缺陷
• "birth defects" 中文翻译 :    出生缺陷胚胎发育紊乱引起的形态、结构、功能、代谢等方面的异常的统称
• "bodily defects" 中文翻译 :    身体缺陷
• "buccal defects" 中文翻译 :    颊缺损
• "bulk defects" 中文翻译 :    体缺陷
• "cardiac defects" 中文翻译 :    心脏畸形
• "chromosomal defects" 中文翻译 :    染色体异常
• "classification of defects" 中文翻译 :    缺点分类; 缺陷的分类; 缺陷分类
• "common defects" 中文翻译 :    毛衫常见疵点
• "congenital defects" 中文翻译 :    先天性缺陷,调查先天性畸形
• "cosmetic defects" 中文翻译 :    化妆瑕疵
• "crystal defects" 中文翻译 :    晶体缺陷
• "defects concentration" 中文翻译 :    缺陷密度
• "defects in forgings" 中文翻译 :    锻件中的缺陷
• "defects in log" 中文翻译 :    原木缺陷
• "defects in logs" 中文翻译 :    原木缺陷
• "defects in phagocytosis" 中文翻译 :    吞噬作用缺陷
• "defects in solids" 中文翻译 :    固体缺陷
• "defects in tare" 中文翻译 :    包皮缺陷

• The 0 - 15kev energy slow - positron beam was used to measure the dopple broadening in sio2 / sic . both the s and w parameters clearly showed that the density of defect in sio2 layer had decreased after annealing in n2
  利用0 - 15kev的慢正电子多谱勒能量展宽测试sio _ 2 sic的缺陷情况，发现不管是n型还是p型，氧化层附近其s参数经过n _ 2退火明显减小， w参数在这个部位增大。
• Finally , a novel structure of “ amorphous - polycrystalline / nanocrystalline ” , ( si / ge ) xzno thin films , has been fabricated successfully by combing magnetron sputtering and thermal annealing technologies . features of film morphology , interfaces , microstructure , crystallization behaviors and optical properties have been investigated , which illustrates that nanocrystals of ge has direct energy band gap in our experiment , and si - based multilayers with broad wavelength absorption of visible light , high intersity of photoluminescence and low density of defect recombination centers has been developed . it is of great significance for its applications in photovoltaic and optoelectronic aeras
  最终,对磁控溅射技术和气氛热处理工艺相结合的方法制备出的“非晶-多晶/纳米晶”结构的( si / ge ) xzno薄膜的表面,界面,微观组织结构,结晶特征,光吸收性能和光致发光特征进行了研究,证明了此条件下ge纳米晶已经具备了直接带隙材料的特征,并研制出具有宽吸收带、高发光强度和低缺陷复合中心密度的新型si基多层结构薄膜。